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MTD393V PJP8N60 T994D 926309 MTD393V 01M10V TLC157EP 2SA19
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  2SA1203 2002-08-13 1 toshiba transistor silicon pnp epitaxial type (pct process) 2SA1203 audio frequency amplifier applications  suitable for output stage of 3 watts amplifier  small flat package  p c = 1.0 to 2.0 w (mounted on ceramic substrate)  complementary to 2sc2883 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo ? 30 v collector-emitter voltage v ceo ? 30 v emitter-base voltage v ebo ? 5 v collector current i c ? 1.5 a base current i b ? 0.3 a p c 500 collector power dissipation p c (note 1) 1000 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: mounted on ceramic substrate (250 mm 2 0.8 t) unit: mm pw-mini jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2SA1203 2002-08-13 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = ? 30 v, i e = 0 D  D ? 0.1 a emitter cut-off current i ebo v eb = ? 5 v, i c = 0 D  D  ? 0.1 a collector-emitter breakdown voltage v (br) ceo i c = ? 10 ma, i b = 0 ? 30 D  D v emitter-base breakdown voltage v (br) ebo i e = ? 1 ma, i c = 0 ? 5 D  D v dc current gain h fe (note 2) v ce = ? 2 v, i c = ? 500 ma 100 D 320 collector-emitter saturation voltage v ce (sat) i c = ? 1.5 a, i b = ? 0.03 a D D ? 2.0 v base-emitter voltage v be v ce = ? 2 v, i c = ? 500 ma D D ? 1.0 v transition frequency f t v ce = ? 2 v, i c = ? 500 ma D 120 D mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz D D 50 pf note 2: h fe classification o: 100 to 200, y: 160 to 320 marking h o type name h fe classification
2SA1203 2002-08-13 3 p c ? ta collector current i c (a) i c ? v be v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (ma) dc current gain h fe i c ? v ce collector current i c (ma) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector current i c (a) base-emitter voltage v be (v) safe operating area h fe ? i c collector current i c (ma) ambient temperature ta (c) collector power dissipation p c (w) 0  16  8  4 0  0.8  1.2  12  0.4 common emitter ta  25c i b   1 ma  10 0  8  4  3  2  6 common emitter v ce   2 v  1 500  10  300  3 100 10  30  100 300 1000 ta  100c 25  25 50 30 3000  3000  1000 common emitter i c /i b  50  1  0.5  10  300  3  0.1  0.01  30  100  0.3  1  0.05  0.03  3  3000  1000 ta  100c 25  25 0  1.6  0.8  0.4 0  0.8  1.6 common emitter v ce   2 v  1.2  1.2  0.4  2.0 ta  100c 25  25 * : single nonrepetitive pulse ta  25c curves must be derated linearly with increase in temperature tested without a substrate  0.1  3  0.3  30  100  30  10  100  5  50 i c max (pulse) * i c max (continuous) 100 ms * 1 ms * 10 ms * v ceo max  10  1  300  3000  1000  500 dc operation ta  25c 0 0 0.6 0.2 0.8 0.4 1.2 1.0 120 80 100 40 60 20 140 160 (1) mounted on ceramic substrate (250 mm 2  0.8 t) (2) no heat sink (1) (2)
2SA1203 2002-08-13 4  toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc..  the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk.  the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others.  the information contained herein is subject to change without notice. 000707ea a restrictions on product use


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